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Highly Scalable Z-RAM Memory With Longest Data Retention Time Ever Reported

Innovative Silicon, Inc. (ISi), the inventor and licensor of the Z-RAM® ultra-dense memory technology for stand-alone DRAM memory applications, and Hynix Semiconductor Inc. announced today that Hynix will deliver a paper titled “Highly scalable Z-RAM with remarkably long data retention for DRAM application” at the 2009 Symposium on VLSI Technology in Session 12A-4. The presentation will take place on Wednesday, June 17 at 5:30 p.m. at the Rihga Royal Hotel Kyoto in Kyoto, Japan.

Dr. Tae-Su Jang, member of technical staff in the Hynix R&D Division, will deliver the paper that highlights the operating characteristics of Z-RAM memory technology fabricated on a 50nm DRAM process. Using a 54nm x 54nm floating-body memory bitcell, the paper presents the longest floating-body retention time reported – longer than 8 seconds at 93 degrees Celsius – as well as an extremely large programming window of 1.6 volts. These improvements were obtained through DRAM technology optimizations such as junction engineering, thermal treatments, and improved passivation processes. The paper concludes by demonstrating the suitability of floating body memories for DRAM applications.

Since 1987, the Symposia has provided a forum whereby the world's top technologists engage in an open exchange of ideas. The presentation of high-quality papers has made it possible for attendees (technology people and circuit and system designers) to learn about new directions in the development of VLSI technology. Event sponsors include the IEEE Electron Devices Society and Solid-State Circuits Society, and the Japan Society of Applied Physics in cooperation with the Institute of Electronics, Information and Communication Engineers.

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