Posted in | News | Nanoelectronics

New Vertically Optimized Nanometer Design Platform for Advanced Device Production

Samsung Electronics, Co., Ltd., GLOBALFOUNDRIES and Synopsys, Inc (NASDAQ: SNPS) today announced the delivery of the industry’s first complete vertically optimized 32/28 nanometer (nm) design platform. Demonstrating the strength of the collaboration established and announced at DAC a year ago, the companies are collectively providing a technology enablement solution for the design and manufacturing of advanced mobile and embedded devices.

The solution consists of optimized high performance, low-power processor and physical IP from ARM; tool enablement, connectivity IP and integrated design flow from Synopsys; and 32/28 nm low-power process technology from the Common Platform alliance of IBM, Samsung and GLOBALFOUNDRIES. The Common Platform 32/28 nm process uses an innovative high-k metal gate approach to address the limitations of polysilicon technology. It leverages the research and development efforts of the IBM joint technology development alliance to offer a high-performance, low-power manufacturing platform.

The 32 nm technology is scalable to 28 nm for area optimization. Customers can seamlessly transition to 28 nm technology without the need for a major redesign and with lower risk, reduced cost and faster time-to-market.

This complete solution demonstrates the important role industry collaboration has in addressing the increasing complexity of SoC design as technology migrates to smaller geometries. The platform leverages:

  • ARM® Cortex™ high-performance, low-power processor architecture and optimized suite of physical IP including standard cells, power management kit, memory compilers and interface IP, for the 32/28 nm HKMG process. The ARM IP contribution delivers valuable low-power and system cost benefits. All physical IP are readily accessible on DesignStart - http://designstart.arm.com
  • Synopsys Lynx Design System, enabled by the Galaxy™ Implementation Platform with IC Validator In-Design physical verification , and the Synopsys DesignWare® portfolio of interface IP. This RTL-to-GDSII implementation solution reduces risk and total design costs for optimized 32/28 nm HKMG ARM Cortex processor-based SoC designs.
  • 10 test chips produced through the three-way collaboration in 32 and 28 nm HKMG process technology. Producing these chips has helped validated the design platform, including Common Platform PDKs, ARM Physical IP and Cortex processors, Synopsys Interface IP, core tool enablement and design methodology for accelerating first customer silicon success.
  • 32 nm low-power HKMG process technology is currently factory-qualified by Samsung. 28 nm low-power HKMG process technology to be factory-qualified at GLOBALFOUNDRIES and Samsung in Q1 2011. The 32/28 nm process technologies, featuring the innovative Gate First approach to HKMG, offer significant improvements in performance and power consumption when compared to the 45/40 nm technology generations.
  • A standardized platform to manufacture 28 nm low-power HKMG semiconductors for a new generation of mobile devices, providing the flexibility of multi-sourcing based on the planned synchronization of fabs by members of the Common Platform alliance.
  • Demonstrations and technical sessions of this comprehensive 32/28 nm enablement platform will be shown at the 2010 DAC in the ARM-Common Platform-Synopsys booth (#586) “32/28 nm Delivered” exhibit. On Tuesday, June 15, the companies will host an access innovation luncheon - where executives from the five allied companies will detail the benefits of 32/28 nm HKMG and the accessibility of the enablement platform. Online registration is required at: https://www.synopsys.com/

Source: http://www.synopsys.com

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    Synopsys, Inc.. (2022, July 13). New Vertically Optimized Nanometer Design Platform for Advanced Device Production. AZoNano. Retrieved on December 04, 2024 from https://www.azonano.com/news.aspx?newsID=18033.

  • MLA

    Synopsys, Inc.. "New Vertically Optimized Nanometer Design Platform for Advanced Device Production". AZoNano. 04 December 2024. <https://www.azonano.com/news.aspx?newsID=18033>.

  • Chicago

    Synopsys, Inc.. "New Vertically Optimized Nanometer Design Platform for Advanced Device Production". AZoNano. https://www.azonano.com/news.aspx?newsID=18033. (accessed December 04, 2024).

  • Harvard

    Synopsys, Inc.. 2022. New Vertically Optimized Nanometer Design Platform for Advanced Device Production. AZoNano, viewed 04 December 2024, https://www.azonano.com/news.aspx?newsID=18033.

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type
Submit

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.