Sequential Infiltration Synthesis (SIS) Significantly Improves EUV Patterning

This week, at the SPIE Advanced Lithography conference 2019, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates the positive impact of sequential infiltration synthesis (SIS) on the EUVL (extreme ultra-violet lithography) patterning process. This post-lithography technique is shown to significantly reduce stochastic nano-failures and line roughness, contributing to the introduction of EUVL patterning of future nodes”. This work integrates recent advancements on metrology and etch, and on material developments, which will be presented in multiple papers at this week’s 2019 SPIE Advanced Lithography Conference.

TEM image of the photoresist pattern after lithography exposure (left) and TEM EDX signal from Aluminum for the photoresist pattern after the SIS step (right).

SIS is an existing technique, used in directed self-assembly (DSA) and now applied in EUV lithography, in which the photoresist is infiltrated with an inorganic element to make it harder and more robust, thereby enhancing the patterning performance on different parameters. Imec and partners show the first comparison between an EUVL-SIS and a standard EUVL patterning process demonstrating the benefits of SIS regarding roughness, nano-failure mitigation and local variability. When adding an SIS step during a full pattern transfer in a TiN layer, imec observed a improvement of 60 % for intrafield local critical dimension uniformity (LCDU) and 10% for line edge roughness compared to a reference process. These patterning enhancements are inherent properties of SIS. Also, the number of nanobreaks – a typical stochastic nano-failure – is reduced by at least one order of magnitude. Results were confirmed in an industrial relevant use case, showing reduced defectivity in a logic chip with a 20% smaller tip-to-tip critical dimension at a similar LCDU as a standard EUVL process.

The improvement SIS showcases on all parameters is indebted to imec’s EUV lithography and metrology infrastructure and recent advancements in the field of process control, material and etch research. The current work brings these results and competences together in one paper, establishing SIS as a significant EUV patterning enhancement technique. The progress on each of the integrated aspects and SIS will be presented on the SPIE Advanced Lithography conference in multiple papers.

The work was performed in collaboration with ASM and ASML.

"The recent achievements with SIS for EUV lithography were enabled by the progress imec and its partners have made in various domains such as materials science, deposition, imaging, and metrology.  This is a great example of how the integration of knowledge and combined efforts from multiple domains and ecosystem partners will enable a path to scale to N3 and beyond."  Greg McIntyre, director of advanced patterning at imec.

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    IMEC. (2019, February 27). Sequential Infiltration Synthesis (SIS) Significantly Improves EUV Patterning. AZoNano. Retrieved on December 03, 2024 from https://www.azonano.com/news.aspx?newsID=36601.

  • MLA

    IMEC. "Sequential Infiltration Synthesis (SIS) Significantly Improves EUV Patterning". AZoNano. 03 December 2024. <https://www.azonano.com/news.aspx?newsID=36601>.

  • Chicago

    IMEC. "Sequential Infiltration Synthesis (SIS) Significantly Improves EUV Patterning". AZoNano. https://www.azonano.com/news.aspx?newsID=36601. (accessed December 03, 2024).

  • Harvard

    IMEC. 2019. Sequential Infiltration Synthesis (SIS) Significantly Improves EUV Patterning. AZoNano, viewed 03 December 2024, https://www.azonano.com/news.aspx?newsID=36601.

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type
Submit

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.