Imec has shown that the presence of hydrogen and/or inert species during Ge deposition significantly improves the quality of the Ge layers grown on Si by solid phase epitaxy (SPE). The resulting layers have excellent crystalline quality and low surface roughness, making SPE a valuable alternative for conventional heteroepitaxy which is performed typically at much higher temperatures.
Imec and Holst Centre have recently presented an ultralow-power 2.4GHz/915MHz receiver with good sensitivity. The receiver runs on a record low power consumption: it only needs 51µW when continuously on.
The nanowire pinch-off field effect transistor (FET) or junctionless transistor is a uniformly doped nanowire without junctions with a wrap-around gate. The idea and basic working principle of the nanowire pinch-off transistor were developed in imec and already reported in 2007 and 2008.
Presto Engineering Inc., a pioneer of the labless business model for bringing semiconductor products into volume production, and CEA-Leti today announced that they have begun a three-year collaboration to develop test an...
Lam Research Corporation, a major supplier of semiconductor wafer fabrication equipment and services, today announced it has shipped the 3,000th single-wafer SEZ® spin clean technology process module to a leading DRAM manufacturer.
Scientists have developed a brain implant that essentially melts into place, snugly fitting to the brain's surface.
An innovative concept from scientists of the Julich-Aachen Research Alliance (JARA) will pave the way for designing chips for future computers. For the generation after next of computer chips this development means highe...
Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced the industry's first production of 20 nanometer (nm) class NAND chips for use in Secure Digital (SD) memory cards and embedded memory solutions.
Transistors, the cornerstone of electronics, are lossy and therefore consume energy. Researchers from the ETH Zürich and EPF Lausanne have developed transistors targeting high switching speeds and higher output powers. The devices can be used more efficiently as conventional transistors, so as to reduce energy consumption and CO2 emissions.
Without doubt, actuators for precise control of optics were one of the main topics at the SPIE Defense, Security + Sensing 2010 Exhibition in Florida in April. Noliac's distributor Micromechatronics Inc. exhibited and attracted many visitors.
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