AIXTRON AG announced today that in the third quarter 2009 the Indian Institute of Science (IISc), India placed an order for one AIX 200/4 RF-S R+D MOCVD reactor. It will be delivered in the first quarter 2010 and installed at the institute's new research facility for nanoenginnering at Bangalore, India.
Dr. Srinivasan Raghavan, Assistant Professor at Materials Research Centre (MRC), IISc, comments, "Our new AIXTRON system will be used to deposit uniform doped layers of aluminium, indium and gallium nitrides (AlN, InN, GaN) on 2 and 3 inch sapphire and silicon substrates. With this we intend to build the process technology for a range of advanced devices including white UHB LEDs, solar cells and lasers among others such as transistors. In particular, our aim is to understand the fundamental relationships between stress evolution and defect formation during growth of these materials. Having a world-class MOCVD system such as the AIX 200/4 RF-S will greatly facilitate progress of this work.
Also, we are looking forward to working closely with AIXTRON and enter into a comprehensive technical cooperation program for mutual benefit. I know we can rely on the company to provide us with not only an excellent research tool but also responsive guidance and operating know-how."
Currently celebrating its 100th Anniversary, the Indian Institute of Science is one of India's most prestigious institutions for postgraduate (Masters and PhD) education and research. The Materials Research Centre (MRC) was established as the Materials Research Laboratory in 1978 to pursue research and provide education in the interdisciplinary field of Materials Science and Technology. Areas in which the MRC is currently active include nanomaterials, electroceramics, electro-optic functional materials and compound semiconductors. The new centre for nanoengineering is an interdisciplinary unit that involves collaboration with faculty members from multiple departments.