AIXTRON AG announced
today that in the third quarter 2009 the Indian Institute of Science (IISc),
India placed an order for one AIX 200/4 RF-S R+D MOCVD reactor. It will be delivered
in the first quarter 2010 and installed at the institute's new research facility
for nanoenginnering at Bangalore, India.
Dr. Srinivasan Raghavan, Assistant Professor at Materials Research Centre (MRC),
IISc, comments, "Our new AIXTRON system will be used to deposit uniform
doped layers of aluminium, indium and gallium nitrides (AlN, InN, GaN) on 2
and 3 inch sapphire and silicon substrates. With this we intend to build the
process technology for a range of advanced devices including white UHB LEDs,
solar cells and lasers among others such as transistors. In particular, our
aim is to understand the fundamental relationships between stress evolution
and defect formation during growth of these materials. Having a world-class
MOCVD system such as the AIX 200/4 RF-S will greatly facilitate progress of
Also, we are looking forward to working closely with AIXTRON and enter into
a comprehensive technical cooperation program for mutual benefit. I know we
can rely on the company to provide us with not only an excellent research tool
but also responsive guidance and operating know-how."
Currently celebrating its 100th Anniversary, the Indian Institute of Science
is one of India's most prestigious institutions for postgraduate (Masters and
PhD) education and research. The Materials Research Centre (MRC) was established
as the Materials Research Laboratory in 1978 to pursue research and provide
education in the interdisciplinary field of Materials Science and Technology.
Areas in which the MRC is currently active include nanomaterials, electroceramics,
electro-optic functional materials and compound semiconductors. The new centre
for nanoengineering is an interdisciplinary unit that involves collaboration
with faculty members from multiple departments.