Integrated Device Technology, Inc. (IDT®)(NASDAQ:IDTI), a leading provider of essential mixed signal semiconductor solutions that enrich the digital media experience, today announced the availability of its all-silicon CMOS oscillators, the MM8202 and the MM8102 in wafer and package forms, making IDT the only company to offer quartz-crystal-level performance with a CMOS oscillator in both forms.
These ICs eliminate quartz-based resonators and oscillators in consumer, computation and storage applications with small form factor requirements and offer excellent link performance for all generations of common serial wireline interfaces, including S-ATA, PCIe, USB 2.0 and USB 3.0. The wafer form availability of the product enables chip-on-board (CoB) and multi-chip module (MCM) assembly designs for significant space savings.
The MM8202 and MM8102 are built on standard CMOS technology and do not require any mechanical frequency references, be it quartz or MEMS, offering IDT customers a fully integrated alternative to quartz-based resonators and oscillators. In addition, the MM8202 is ideal for thin profile consumer devices, such as high-capacity SIM cards and USB Flash drives.
“IDT is the first and only company to offer quartz-crystal-level performance with a CMOS oscillator in wafer form with high frequency accuracy,” said Michael McCorquodale, general manager of the IDT Silicon Frequency Control (SFC) business. “Replacement of quartz crystals with our wire-bondable CMOS oscillator is a major breakthrough for form-factor-sensitive designs. It enables cost-effective CoB assembly for USB Flash drives, card readers and many other consumer applications. Our proprietary post-CMOS wafer-scale process technology allows customers to build their devices using our die directly on a substrate, thereby enabling the development of products with the smallest form factors, while reducing cost and accelerating time to market.”
The MM8102 and MM8202 offer excellent frequency accuracy (lower than 300ppm for MM8102) and high frequency operation (up to 133MHz) — ideal for common high-bandwidth serial wireline interfaces. Both devices consume very low active power (2mA typical at 1.8V). In addition, a stand-by mode is also supported where the power consumption is reduced to less than 1uA. The all-silicon, monolithic devices also offer excellent shock and vibration resistance as they generate frequencies electronically without any moving elements.