Posted in | Nanoelectronics

Nanoscale Memory Device Suitable for Smart Phones and Tablet Computers

Intel and Micron Technology have unveiled the 20nm process technology for producing NAND flash memory.

It delivers an 8GB multi-level cell (MLC) NAND flash product, delivering a high-capacity, nano-factor storage space for music, video and books on smart phones, tablets and solid-state drives (SSDs).

Enhanced data storage and features requires NAND flash technology, such as more capacity in nanostructures. The product measures 118mm2 and allows 30 to 40% less board space. This feature offers efficient system level and helps tablet and smartphone developers to add enhancements such as a large battery, screen or a chip for more features. The joint venture, called IM Flash Technologies (IMFT), has developed the product. Compressing NAND lithography to this node is cost-effective and helps enhance fab yield, with nearly 50% extra capacity.

Glen Hawk, vice president of Micron’s NAND Solutions Group the process will allow cost-effective, value-added solid-state storage solutions.

The device is anticipated to go into mass manufacture in the second half of 2011 by which time the joint venture also anticipates to launch a 16GB product, providing up to 128GBs capacity in a single storage solution.

Source: www.micron.com

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