Axcelis Delivers Novel Purion Platform for Sub-16 nm Devices to Asian Semiconductor Manufacturer

Axcelis Technologies, Inc., a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced today that it has shipped the new Purion M medium current implanter, to a major semiconductor manufacturer located in Asia.

The Purion M is part of the Company's expanding family of next generation Purion implanters, specifically designed to provide leading purity, precision, and productivity. The system will be used to develop and manufacture next generation memory and FLASH devices.

The Purion M
The new Purion M medium current system utilizes Axcelis' advanced spot beam line technology coupled with the Purion 500 WPH single wafer platform. This combination provides chip manufacturers with exceptional reliability, and remarkable precision and productivity for the widest range of implant energies and doses to address applications that include the formation of precise wells, channels and source/drain junctions. In addition, the system's industry-leading energy range and beam currents enable it to be utilized for implant processes traditionally run on high energy or high current implanters, providing chipmakers with maximum manufacturing versatility and capital efficiency. The Purion M's beam line design utilizes Axcelis' patented angular energy filter and angle control system, eliminating all forms of energy contamination while ensuring the industry's most accurate dopant placement. The result is an exceptionally pure and precise implant, enabling the highest production yields. The system is part of the Company's expanding line of next generation Purion implanters, enabling high yield manufacturing of sub 16nm planar and 3-D devices. The Purion platform was designed to drive manufacturing flexibility and lower the total cost of fab operations, and features common end station architecture and spot beamline design, the industry's most advanced filtration systems, and innovative angle control and constant focal length scanning systems. The result is absolute beam purity and the most precise dopant placement possible, while ensuring the highest levels of productivity and capital efficiency.


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