Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that the company has partnered with GLOBALFOUNDRIES to build fully processed 300mm wafers with Everspin’s magnetic tunnel junction (MTJ) Spin-Torque Magnetoresistive Random-Access Memory (ST-MRAM) technology, starting with GLOBALFOUNDRIES 40 nanometer and 28 nanometer Low Power CMOS platforms.
This relationship forms the core of Everspin’s long-term strategy to proliferate ST-MRAM into the marketplace by offering designers of high performance storage systems a fast, non-volatile memory solution featuring low latency and increased reliability.
GLOBALFOUNDRIES has invested in advanced ST-MRAM CMOS processing equipment to deliver the fully processed CMOS and MRAM wafers beginning with GLOBALFOUNDRIES’ 40 nanometer technology node. GLOBALFOUNDRIES has also invested an undisclosed amount in Everspin.
“Everspin’s experience in shipping over 40 million MRAM products to the market, as well as designing and launching the first commercially-available ST-MRAM, together with our manufacturing capability will establish the industry’s first 300mm ST-MRAM technology,” said Gregg Bartlett, senior vice president of product management at GLOBALFOUNDRIES. “Our partnership with Everspin will help drive ST-MRAM adoption and feed the rapidly growing MRAM market.”
“GLOBALFOUNDRIES is a pioneer in delivering value-added and fully-integrated memory solutions for a multitude of markets and applications,” said Phill LoPresti, President and CEO at Everspin. “Our partnership with a world-class foundry is a fundamental piece of our long-term strategy to deliver ST-MRAM on 300mm, accelerate availability of our perpendicular MTJ ST-MRAM bit cell, fast-track ST-MRAM production in advanced CMOS technology nodes, secure high volume capacity for our customers, and scale ST-MRAM towards Gigabit densities to further expand the market and application uses of Everspin ST-MRAM products.”