CEA-Leti will present 10 papers, including two invited papers, at the IEDM/IEEE 2010 International Electron Devices Meeting Dec. 6-8, in San Francisco, Calif.
The two invited papers include an overview on FDSOI (the alternative to bulk technologies for 20nm nodes and below) and an overview of new-generation substrates enabling future devices in the More Moore and More Than Moore topics.
A paper on the latest results in the integration of the metallic dual gate on FDSOI technology, with UTBOX, clearly positions Leti on the sub-16nm CMOS technologies.
Leti will present two papers on memory, including one on the impact of N-doping in GeTe to boost the data-retention performances of phase-change memory (PCM), and an in-depth study on the role of defects in the Al2O3 blocking layer for charge-trapped memories.
Leti also will present findings of a futuristic study on the mobility of carriers in 10nm silicon nanowires for tomorrow’s CMOS (end of ITRS roadmap), and the latest results of its 3D through-silicon-via integration.
Two additional papers include results from Leti’s work on the reliability of oxide gate based on high-k dielectrics doped with Lanthanum, and CMOS ICs on SiGe on insulator and silicon constrain (co-integration into CMOS SRAM cell on FDSOI).
Source: http://www.leti.fr/