Dongbu HiTek today announced the addition of the BD180LV process to its portfolio of best-in-class BCDMOS process technologies.
Ideal for designing highly integrated chips at the 0.18-micron node, the new mixed-signal process optimizes nLDMOS transistors with the industry’s lowest Rsp (specific on-resistance) while accommodating a broad 7V-to-30V operating voltage range with outstanding reliability characteristics.
According to Jae Song, Dongbu HiTek VP of sales and marketing, the BD180LV process raises the performance bar for advanced BCDMOS processes promising to shrink the size of chips for handheld and portable consumer electronics products. “We believe we’ve developed a leading-edge BCDMOS technology that surpasses all foundry offerings and challenges the very best of the IDMs in terms of Rsp, breakdown voltage, and reliability.” He confirmed that Dongbu HiTek’s extensive testing of its latest best-in-class BCDMOS has demonstrated stable performance and reliability characteristics in typical consumer electronics operating environments.
In a technical paper that will be formally released in conjunction with the 22nd International Symposium on Power Semiconductor Devices (ISPSD’10, June 6-10 in Hiroshima, Japan), Dongbu HiTek details BD180LV parameter testing of breakdown characteristics for 24V nLDMOS, noting, “The Ids-Vds curve shows very stable characteristics up to 27.5V with actual off-state and on-state breakdown voltages of 36V and 33V, respectively. At 5.0Vgs and 0.1Vds, the Rsp was 0.0145 ohms square millimeter – the lowest ever reported in the semiconductor industry.”