"Gettering and Defect Engineering in Semiconductor Technology XII" Report Available from Research and Markets

Research and Markets has announced the addition of the "Gettering and Defect Engineering in Semiconductor Technology XII" report to their offering.

"Selected, peer reviewed papers from Gettering and Defect Engineering in Semiconductor Technology - GADEST 2007" held from 14th to 19th October 2007 in Italy at the EMFCSC

This collection comprises 117 peer reviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors' fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

The collection is divided into the chapters: Crystalline silicon for solar cells: single crystals, multi-crystalline Si, ribbons, Si thin films on substrates; Silicon-based materials and advanced semiconductor materials (strained Si, SOI, SiGe, SiC, Ge); Impurities (oxygen, carbon, nitrogen, fluorine, metals) in Si; Modeling simulation of defects in Si semiconductors; Defect engineering in microelectronics and photovoltaics; Gettering and passivation techniques; Defect and impurity characterization (physical and electrical); Si-based Nanostructures (nanocrystals, nanowires, nanodevices); Silicon-based heterostructures and optoelectronics.

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