A research team led by Professor Arno Rauschenbeutel Vienna Center for Quantum Science and Technology, in partnership with the researchers at the Johannes Gutenberg University has developed an ultrasensitive method by controllably coupling single atoms to light within ultra-thin fiber glass having a thickness of 500 nm, paving the way to develop detectors that are capable of sensing ultra-trace amounts of materials.
By Dr. Cameron Chai
9 Dec 2011
Micron Technology and Intel have set a new standard in NAND flash technology with the introduction of a first-of-its-kind 20 nm, 128 Gb multilevel-cell (MLC) device developed by their joint-development company, IM Flash Technologies.
IMS Nanofabrication, a provider of nanoscale direct-write and mask lithography imaging systems for semiconductor production, has inked an equity funding deal with contribution from Photronics, Intel Capital and private investor groups for the commercialization of its electron multi-beam mask exposure tool (eMET) for mask writing applications at sub 22 nm.
Aehr Test Systems, a provider of semiconductor burn-in and test equipment, has supplied its 100th full-wafer contactor for application in its Fox line of equipment used in wafer level burn-in and wafer sort test applications.
By Dr. Cameron Chai
9 Dec 2011
imec, a company conducting research in nanoelectronics, and Holst Centre, an open-innovation independent research and development centre, have announced the creation of a micromachined vibration energy harvester that provides high output power.
The Catalan Institute of Nanotechnology scientists have developed a novel method based on the traditional corrosion techniques for the production of highly intricate hollow nanoparticles or cage-like nanostructures, which can be used for industrial processing and medical applications.
By Dr. Cameron Chai
9 Dec 2011
Helmholtz Zentrum Berlin (HZB) scientists have created a novel microscope for performing X-ray spectroscopic studies of single nanoparticles and nanostructures at high spatial resolution at the nanoscale.
By Dr. Cameron Chai
9 Dec 2011
A research team led by Mike Lilly at Sandia National Laboratories has noticed a voltage increase of up to 25% in two nanowires separated by a few nanometers. The finding provides a better understanding on the incorporation of nanowires in the building of nanocircuits for next-generation devices.
JPK Instruments reports on a paper in Nano Letters where Dr Nikolai Severin and co-workers from the group of Professor Jürgen P. Rabe have applied JPK's NanoWizard®II Ultra system to improve their understanding of the properties of graphene.
IDTechEx has presented the Product Development Award in Printed Electronics to MeadWestvaco, a pioneer in packaging, and Vorbeck Materials, a provider of products based on graphene, for MeadWestvaco’s novel anti-theft packaging solution called Natralock with Siren Technology.
JPK Instruments, a world-leading manufacturer of nanoanalytic instrumentation for research in life sciences and soft matter, announce exciting new quantitative imaging capabilities for the recently launched NanoWizard®3 AFM system.
The Tokyo Institute of Technology and Teijin have jointly fabricated a carbon nanofiber with high conductivity and a first-of-its-kind elliptical cross-section comprising well-developed graphite layers arranged in one direction.
By Dr. Cameron Chai
8 Dec 2011
New three-dimensional transistors made from tiny indium-gallium-arsenide nanowires can help engineers design lighter laptops and more efficient, compact and faster integrated circuits.
By Dr. Cameron Chai
8 Dec 2011
Vapor Technologies, a provider of physical vapor deposition thin-film coating devices, has introduced a first-of-its-kind true black sophisticated low temperature arc vapor deposition (LTAVD) coating.
By Dr. Cameron Chai
8 Dec 2011
Applied Materials has established its presence in defect inspection scanning electron microscope (SEM) technology with the introduction of the first-of-its-kind tool called the Applied SEMVision G5 system that allows chip manufacturers to image and study 20 nm yield-limiting imperfections with no manual interference.